Ultra-Fast Photoreceivers
Series HSA-X-S
  • Si and InGaAs Photodiodes
  • Wavelength Range from 320 to 1700 nm
  • Bandwidth from 10 kHz up to 2 GHz
  • Max. Conversion Gain 4.8 x 103 V/W
  • Min. NEP approx. 14 pW/√Hz

FEMTO´s GHz Technology


By combining state of the art photodiodes with the proven and outstanding FEMTO GHz amplifier technology we designed a new family of photoreceivers with a remarkable performance. The HSA-X-S offers an upper bandwidth limit of 2 GHz. Two models with either a fast Si or InGaAs photodiode cover a spectral range from 320 to 1000 nm and 850 to 1700 nm, respectively. Due to the sophisticated amplifier design the minimum NEP is just 14 pW/√Hz at a transimpedance of 5 x 103 V/A. This allows for the measurement of optical power levels in the µW range with GHz speed. For the HSA-X-S-1G4-SI with silicon photodiode the effective active diameter is a remarkably large 0.8 mm due to the use of a ball lens in front of the detector chip.

Applications
  • Spectroscopy
  • Fast Pulse and Transient Measurements
  • Optical Triggering
  • Optical Front-End for Oscilloscopes and A/D Converters
Model HSA-X-S-1G4-SI HSA-X-S-2G-IN
Photodiode 0.8 mm eff. Ø Si PIN 0.2 mm eff. Ø InGaAs PIN
Spectral Range 320 ... 1000 nm 850 ... 1700 nm
Bandwidth (-3 dB) 10 kHz ... 1.4 GHz 10 kHz ... 2 GHz

Rise/Fall Time
(10%-90%)

 250 ps 180 ps
Transimpedance Gain 5 x 103 V/A 5 x 103 V/A
Max. Conversion Gain 2.5 x 103 V/W
(@ 760 nm)		 4.8 x 103 V/W
(@ 1550 nm)
Min NEP (@ 100 MHz) 26 pW/√Hz
(@ 760 nm) 		14 pW/√Hz
(@ 1550 nm)
View and
Download Datasheet		 269 kB 294 kB
Output voltage 2 Vp-p max. (@ 50 Ω load). Threaded M4 and 8-32 mounting holes for integration in optical bench systems. Fiber-optic input optional. Output short-circuit protected. Power supply +15 V via 3-pin LEMO socket. A mating connector is provided with the device. Optional power supply PS-15 available. For further information please view the datasheet.

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